Webinar – Wide Bandgap devices for a greener future
Wednesday, 19 July 2023
1.30 pm SGT (UTC+8)
Wide bandgap semiconductor materials such as gallium nitride (GaN) and silicon carbide (SiC) are the ideal choice when looking for next generation of efficient power converter switches for a greener future. Due to the material properties, these WBG semiconductor devices are able to operate at higher voltages, temperatures, and frequencies, thus enabling higher power conversion efficiency, smaller size, lighter weight, lower overall cost – or all of these together.
What are the characteristics of the latest WBG products and offering from Infineon? Would you also like to know what are the different strengths by application requirements brought by GaN based CoolGaN™ and SiC based CoolSiC™? Are you anxious to know more? Join our live webinar and hear from our topic expect professional Dr Singh, Senior Staff Engineer, who is responsible for Wide Bandgap (WBG) application.
Get yourself ready for the webinar: For full details about Wide Bandgap (SiC/GaN) - click here
Agenda
- Opening & introduction
- To understand the key differentiator of Infineon's GaN/SiC
- Get to know the full product portfolio of CoolSiC™ and CoolGaN™
- Q&A and wrap up
Key takeaways:
- Address how Wide Bandgap technology is able to help power the future
- Learn the characteristics of the latest product offering
- Get to know the full portfolio of 600 V CoolGaN™ HEMTs, 650 V CoolSiC™ MOSFETs & latest gate drivers
- To understand the use of Wide bandgap devices in application requiring better performance and power density
Speakers
Dr Singh Ravi
Senior Staff Engineer
Dr Singh is a Senior Staff Engineer responsible for Wide Bandgap (WBG) application. He obtained his Ph.D. degree in 2010 from the National University of Singapore (NUS). He is also a Senior member of IEEE and has published more than 30 articles in renowned IEEE journals and conferences on wide topics related to power electronics - topology, sense and control.
